2SC...

Hitachi

2SC2979

Silicon NPN Triple Diffused - High voltage, high speed and high power switching - Collector to base voltage VCBO: 900 V - Collector to emitter voltage VCEO: 800 V - Emitter to base voltage VEBO: 7 V - Collector current IC: 3 A - Collector peak current IC(peak): 6 A - Base current IB: 1.5 A - Collector power dissipation PCtot: 40 W - Junction temperature Tj: 150 °C - Storage temperature Tstg: –55 to +150 °C Datenblatt: 2SC4686A.pdf

€ 1 .75*

Toshiba

2SC3325-Y(TE85L,F)

Beschreibung: Silicon NPN Transistor 50V / 500mA / 200mW Datenblatt: 2SC3325.pdf

€ 0 .15*

Sanyo

2SC3457

800V/3A Switching Regulator Applications - High breakdown voltage and high reliability. - Fast switching speed (tf : 0.1ms typ). - Wide ASO. - Adoption of MBIT process - Transistor type: NPN - Polarisation: bipolar - Collector-emitter voltage: 800V - Collector current:3A - Power: 50W - Case: TO220 - Mounting: THT - Frequency:15MHz Datenblatt: 2SC3457.pdf

€ 1 .75*

Toshiba

2SC3893A

Beschreibung: Silicon NPN Power Transistor for horizontal deflection output for high resolution display 600V / 8A / 50W

€ 0 .60*

Toshiba

2SC4686A

NPN epitaxial silicon transistor 1200V / 50mA / 10W Datenblatt: 2SC4686A.pdf

€ 0 .50*

Hitachi

2SC4744

Silicon NPN Triple Diffused - High breakdown voltage - VCES = 1500 V - Emitter to base voltage VEBO = 6 V - Collector current Ic = 6 A - Collector peak current IC(peak) = 7 A - Collector power dissipation Pc = 50 W - Built-in dampen diode type Datenblatt: 2SC4744.pdf

€ 2 .00*

Toshiba

2SC5129

Silicon NPN Triple Diffused MESA Type Transistor 1500V / 10A / 50W - High speed - High voltage - Low saturation voltage APPLICATIONS - Horizontal deflection output for high resolution display,colorTV - High speed switching applications Datenblatt: 2SC5129.pdf

€ 0 .75*

Toshiba

2SC5200-O

Silicon NPN Triple Diffused Type Audio Transistor 230V / 15A / 150W Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 15 A Pd - Power Dissipation: 150W Gain Bandwidth Product fT: 30 MHz Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: 2SC5200.pdf

€ 1 .55*

Hitachi

2SC5207A

Beschreibung: NPN Transistor For Character Display Horizontal Deflection Output Application Datenblatt: 2SC5207A.pdf

€ 1 .00*

Hitachi

2SC5250

Silicon NPN Triple Diffused Planar Transistor 1500V / 8A / 50W Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6 V Collector current IC 8 A Collector peak current IC(peak) 16 A Collector power dissipation PC*1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Diode current ID 8 A Datenblatt: 2SC5250.pdf

€ 1 .00*

Hitachi

2SC5252

Beschreibung: Silicon NPN Triple Diffused Planar Transistor 800V / 15A Datenblatt: 2SC5252.pdf

€ 3 .00*

Sanyo

2SC5297

NPN Triple Diffused Planar Silicon Transistor - Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications - High speed : tf=100ns typ. - High breakdown voltage : VCBO=1500V - High reliability (Adoption of HVP process) - Collector-to-Emitter Voltage VCEO = 800 V - Emitter-to-Base Voltage VEBO = 6 V - Collector Current Ic = 8 A - Collector Dissipation Pc = 60W Datenblatt: 2SC5297.pdf

€ 1 .00*

Toshiba

2SC5376-B(TE85L,F)

Beschreibung: Silicon NPN Epitaxial Type Transistor 15V / 400mA / 100mW Datenblatt: 2SC5376.pdf

€ 0 .20*

Panasonic

2SC5993/QP

Beschreibung: Silicon NPN Power Transistor 180V / 1.5A / 20W Datenblatt: 2SC5993.pdf

€ 1 .00*