2N...

Texas Instruments

2N1711

NPN Kleinleistungstransistor, AF Uces: 75 V Ic: 500 mA Ptot: 0,8 W fT > 70 MHz B: 100 ... 300

€ 2 .25*

Motorola

2N2219

NPN-Switching Silicon Transistor Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 30 V Collector- Base Voltage VCBO: 60 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.6 V Pd - Power Dissipation: 800 mW Gain Bandwidth Product fT: 250 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Datenblatt: 2N2219A.pdf

€ 2 .65*

Thomson CSF

2N2891

Beschreibung: PNP Bipolar Transistor 80V / 2A / 0.8W Datenblatt: 2N2891.pdf

€ 5 .00*

Philips

2N2894A

PNP Silicon Small Signal Transistor Maximum Collector-Emitter Voltage Vceo: 12V Maximum Power Dissipation Ptot: 360mW Maximum DC Collector Current Icmax: 200mA Collector-base Capacitance-Max: 4.5 pF B: 40 ... 150 Datenblatt: 2N2894A.pdf

€ 1 .00*

Thomson CSF

2N3440

Silicon NPN Transistor 250V / 1A / 10W Datenblatt: 2N3440.pdf

€ 2 .25*

SML Semelab Ltd

2N3716

Bipolar NPN Power Transistor 80V / 10A / 150W Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 10 A Pd - Power Dissipation: 150 W Gain Bandwidth Product fT: 4 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Datenblatt: 2N3716.pdf

€ 1 .25*

Motorola

2N3927

NPN RF Power Transistor Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 18 V Collector- Base Voltage VCBO: 36 V Emitter- Base Voltage VEBO: 4 V Maximum DC Collector Current Ic: 1.5 A Pd - Power Dissipation: 11.6 W Gain Bandwidth Product fT: 350 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Datenblatt: 2N3927.pdf

€ 15 .00*

Philips

2N4393

N-Channel Silicon JFET 40V / 50mA / 1.8W Gate-Drain Voltage: VGD 40 V Gate-Source Voltage: VGS 40 V Gate Current IG: 50 mA Power Dissipation (TC=25°C) PD: 1.8 W Operating and Storage Junction Temperature TJ, Tstg -65 to +175 °C Datenblatt: 2N4393.pdf

€ 1 .50*

Ferranti Semiconductors

2N6288

Beschreibung: NPN Power Transistor 30V / 7A Datenblatt: 2N6288.pdf

€ 0 .30*

Fairchild

2N7000TA

60V N-Channel Small Signal MOSFET Datenblatt: 2N7000.pdf

€ 0 .06*

SGS

2N914

NPN Small Signal Transistor 40V / 10mA / 60MHz Datenblatt: 2N914.pdf

€ 1 .00*

SGS

2N930

Bipolar NPN Silicon Amplifier Transistor Collector- Emitter Voltage VCEO Max: 45 V Collector- Base Voltage VCBO: 45 V Emitter- Base Voltage VEBO: 5 V Total Device Dissipation Pd = 1.2W Maximum DC Collector Current: 30 mA Maximum Operating Temperature: + 200 C Datenblatt: 2N930.pdf

€ 1 .50*