TRANSISTOREN

Texas Instruments

2N1711

NPN Kleinleistungstransistor, AF Uces: 75 V Ic: 500 mA Ptot: 0,8 W fT > 70 MHz B: 100 ... 300

€ 2 .25*

Motorola

2N2219

NPN-Switching Silicon Transistor Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 30 V Collector- Base Voltage VCBO: 60 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 1.6 V Pd - Power Dissipation: 800 mW Gain Bandwidth Product fT: 250 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 150 C Datenblatt: 2N2219A.pdf

€ 2 .65*

Thomson CSF

2N2891

Beschreibung: PNP Bipolar Transistor 80V / 2A / 0.8W Datenblatt: 2N2891.pdf

€ 5 .00*

Philips

2N2894A

PNP Silicon Small Signal Transistor Maximum Collector-Emitter Voltage Vceo: 12V Maximum Power Dissipation Ptot: 360mW Maximum DC Collector Current Icmax: 200mA Collector-base Capacitance-Max: 4.5 pF B: 40 ... 150 Datenblatt: 2N2894A.pdf

€ 1 .00*

Thomson CSF

2N3440

Silicon NPN Transistor 250V / 1A / 10W Datenblatt: 2N3440.pdf

€ 2 .25*

SML Semelab Ltd

2N3716

Bipolar NPN Power Transistor 80V / 10A / 150W Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 80 V Collector- Base Voltage VCBO: 100 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1 V Maximum DC Collector Current: 10 A Pd - Power Dissipation: 150 W Gain Bandwidth Product fT: 4 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Datenblatt: 2N3716.pdf

€ 1 .25*

Motorola

2N3927

NPN RF Power Transistor Transistor Polarity: NPN Collector- Emitter Voltage VCEO Max: 18 V Collector- Base Voltage VCBO: 36 V Emitter- Base Voltage VEBO: 4 V Maximum DC Collector Current Ic: 1.5 A Pd - Power Dissipation: 11.6 W Gain Bandwidth Product fT: 350 MHz Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 200 C Datenblatt: 2N3927.pdf

€ 15 .00*

Philips

2N4393

N-Channel Silicon JFET 40V / 50mA / 1.8W Gate-Drain Voltage: VGD 40 V Gate-Source Voltage: VGS 40 V Gate Current IG: 50 mA Power Dissipation (TC=25°C) PD: 1.8 W Operating and Storage Junction Temperature TJ, Tstg -65 to +175 °C Datenblatt: 2N4393.pdf

€ 1 .50*

Ferranti Semiconductors

2N6288

Beschreibung: NPN Power Transistor 30V / 7A Datenblatt: 2N6288.pdf

€ 0 .30*

Fairchild

2N7000TA

60V N-Channel Small Signal MOSFET Datenblatt: 2N7000.pdf

€ 0 .06*

SGS

2N914

NPN Small Signal Transistor 40V / 10mA / 60MHz Datenblatt: 2N914.pdf

€ 1 .00*

SGS

2N930

Bipolar NPN Silicon Amplifier Transistor Collector- Emitter Voltage VCEO Max: 45 V Collector- Base Voltage VCBO: 45 V Emitter- Base Voltage VEBO: 5 V Total Device Dissipation Pd = 1.2W Maximum DC Collector Current: 30 mA Maximum Operating Temperature: + 200 C Datenblatt: 2N930.pdf

€ 1 .50*

Toshiba

2SA1307

Beschreibung: PNP epitaxial silicon transistor -60V / -5A / 20W Datenblatt: 2SA1307.pdf

€ 0 .40*

Sanken

2SA1488

Silicon PNP Epitaxial Planar Transistor -60V / -4A / 25W Transistor Type: PNP Current - Collector Ic: 4 A Voltage - Collector Emitter Breakdown: -60 V Vce Saturation at Ib, Ic: 500mV at 200mA, 2A Current - Collector Cutoff Icbo: 100µA DC Current Gain (hFE): 40 Power - Max: 25 W Frequency - Transition: 15MHz Operating Temperature Tj: 150C Datenblatt: 2SA1307.pdf

€ 0 .50*

Toshiba

2SA1586

Beschreibung: Silicon PNP Epitaxial Type (PCT process) -50V / -150mA / 100mW Datenblatt: 2SA1586.pdf

€ 0 .04*

Toshiba

2SA1943-O

Beschreibung: Silicon PNP Triple Diffused Type Audio Transistor -230V / -15A / 150W Datenblatt: 2SA1943.pdf

€ 0 .90*

Rohm

2SB1132

PNP Medium Power Transistor (-32V / -1A) Datenblatt: 2SB1132.pdf

€ 0 .30*

Sanyo

2SB405

Beschreibung: - Werkstoff: Ge - Polarity: PNP - Gesamt-Verlustleistung (Pc): 0.72 - Kollektor-Basis-Sperrspannung (Ucb): 25 - Kollektor-Emitter-Sperrspannung (Uce): 25 - Emitter-Basis-Sperrspannung (Ueb): 6 - Kollektorstrom (Ic): 1 - Höchste Sperrschichttemperatur (Tj), °C: 85 - Transitfrequenz (ft): 0.35 - Kurzschluss-Stromverstärkung (hfe): 100

€ 1 .00*

Matsushita

2SB476W

Beschreibung: Germanium PNP Transistor -10V / -2A / 6W Datenblatt: 2SB476W.pdf

€ 0 .50*

Hitachi

2SC2979

Silicon NPN Triple Diffused - High voltage, high speed and high power switching - Collector to base voltage VCBO: 900 V - Collector to emitter voltage VCEO: 800 V - Emitter to base voltage VEBO: 7 V - Collector current IC: 3 A - Collector peak current IC(peak): 6 A - Base current IB: 1.5 A - Collector power dissipation PCtot: 40 W - Junction temperature Tj: 150 °C - Storage temperature Tstg: –55 to +150 °C Datenblatt: 2SC4686A.pdf

€ 1 .75*

Toshiba

2SC3325-Y(TE85L,F)

Beschreibung: Silicon NPN Transistor 50V / 500mA / 200mW Datenblatt: 2SC3325.pdf

€ 0 .15*

Sanyo

2SC3457

800V/3A Switching Regulator Applications - High breakdown voltage and high reliability. - Fast switching speed (tf : 0.1ms typ). - Wide ASO. - Adoption of MBIT process - Transistor type: NPN - Polarisation: bipolar - Collector-emitter voltage: 800V - Collector current:3A - Power: 50W - Case: TO220 - Mounting: THT - Frequency:15MHz Datenblatt: 2SC3457.pdf

€ 1 .75*

Toshiba

2SC3893A

Beschreibung: Silicon NPN Power Transistor for horizontal deflection output for high resolution display 600V / 8A / 50W

€ 0 .60*

Toshiba

2SC4686A

NPN epitaxial silicon transistor 1200V / 50mA / 10W Datenblatt: 2SC4686A.pdf

€ 0 .50*

Hitachi

2SC4744

Silicon NPN Triple Diffused - High breakdown voltage - VCES = 1500 V - Emitter to base voltage VEBO = 6 V - Collector current Ic = 6 A - Collector peak current IC(peak) = 7 A - Collector power dissipation Pc = 50 W - Built-in dampen diode type Datenblatt: 2SC4744.pdf

€ 2 .00*

Toshiba

2SC5129

Silicon NPN Triple Diffused MESA Type Transistor 1500V / 10A / 50W - High speed - High voltage - Low saturation voltage APPLICATIONS - Horizontal deflection output for high resolution display,colorTV - High speed switching applications Datenblatt: 2SC5129.pdf

€ 0 .75*

Toshiba

2SC5200-O

Silicon NPN Triple Diffused Type Audio Transistor 230V / 15A / 150W Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V Emitter- Base Voltage VEBO: 5 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 15 A Pd - Power Dissipation: 150W Gain Bandwidth Product fT: 30 MHz Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: 2SC5200.pdf

€ 1 .55*

Hitachi

2SC5207A

Beschreibung: NPN Transistor For Character Display Horizontal Deflection Output Application Datenblatt: 2SC5207A.pdf

€ 1 .00*

Hitachi

2SC5250

Silicon NPN Triple Diffused Planar Transistor 1500V / 8A / 50W Collector to emitter voltage VCES 1500 V Emitter to base voltage VEBO 6 V Collector current IC 8 A Collector peak current IC(peak) 16 A Collector power dissipation PC*1 50 W Junction temperature Tj 150 °C Storage temperature Tstg –55 to +150 °C Diode current ID 8 A Datenblatt: 2SC5250.pdf

€ 1 .00*

Hitachi

2SC5252

Beschreibung: Silicon NPN Triple Diffused Planar Transistor 800V / 15A Datenblatt: 2SC5252.pdf

€ 3 .00*

Sanyo

2SC5297

NPN Triple Diffused Planar Silicon Transistor - Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications - High speed : tf=100ns typ. - High breakdown voltage : VCBO=1500V - High reliability (Adoption of HVP process) - Collector-to-Emitter Voltage VCEO = 800 V - Emitter-to-Base Voltage VEBO = 6 V - Collector Current Ic = 8 A - Collector Dissipation Pc = 60W Datenblatt: 2SC5297.pdf

€ 1 .00*

Toshiba

2SC5376-B(TE85L,F)

Beschreibung: Silicon NPN Epitaxial Type Transistor 15V / 400mA / 100mW Datenblatt: 2SC5376.pdf

€ 0 .20*

Panasonic

2SC5993/QP

Beschreibung: Silicon NPN Power Transistor 180V / 1.5A / 20W Datenblatt: 2SC5993.pdf

€ 1 .00*

NEC

2SD1018

Silicon NPN Power Transistor - Material of transistor: Si - Polarity: NPN - Maximum collector power dissipation (Pc), W: 80 - Maximum collector-base voltage |Ucb|: 250V - Maximum emitter-base voltage |Ueb|: 5V - Maximum collector current |Ic max|: 4A - Maximum junction temperature (Tj): 150°C - Forward current transfer ratio (hFE), min: 40

€ 2 .00*

Shindengen Inc.

2SD1027

Beschreibung: NPN Power Darlington Transistor 200V / 7A / 100W Datenblatt: 2SD1027.pdf

€ 3 .00*

Hitachi

2SD1138C

Silicon NPN Triple Diffused Low frequency high voltage power amplifier TV vertical deflection output complementary pair with 2SB861 Collector to base voltage VCBO: 200 V Collector to emitter voltage VCEO: 150 V Emitter to base voltage VEBO: 6 V Collector current IC: 2 A Collector peak current IC (peak): 5 A Collector power dissipation PC: 1.8 W Junction temperature Tj: 150 °C Storage temperature Tstg: –45 to +150 °C Datenblatt: 2SC4686A.pdf

€ 1 .25*