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TelCom Semiconductor
TC04ACOA
Beschreibung: Low Power, Bandgap Voltage References Datenblatt: TC04A.pdf

Ab
1 .00*
Microchip
TC1276-10ENB
Beschreibung: 3-Pin Reset Monitors for 3.3V Systems Datenblatt: TC1276.pdf

Ab
0 .20*
Microchip
TC427COA
1.5A Dual High-Speed Power MOSFET Drivers Number of Drivers: 2 Driver Number of Outputs: 2 Output Output Current: 1.5 A Supply Voltage - Min: 4.5 V Supply Voltage - Max: 16 V Configuration: Non-Inverting Rise Time: 30 ns Fall Time: 30 ns Minimum Operating Temperature: 0 C Maximum Operating Temperature: + 70 C Datenblatt: TC427.pdf

Ab
1 .05*
Microchip
TC4427COA713
Beschreibung: 1.5A Dual High-Speed Power MOSFET Drivers Datenblatt: TC4427.pdf

Ab
0 .30*
Toshiba
TC5054P
Beschreibung: MUXed BCD-Output Decade Up-Down Counter

Ab
5 .00*
Toshiba
TC511000BZ-60
Beschreibung: 1M / 60ns COMS Dynamic RAM

3 .50*
Toshiba
TC514256AJ-70
1M (262144x4) / 70ns CMOS Dynamic RAM

Ab
2 .00*
Toshiba
TC514256AP-70
Beschreibung: 1M (262144x4) / 70ns CMOS Dynamic RAM

2 .50*
Toshiba
TC514256AZ-70
1MBit (256KX4Bit) / 70ns CMOS Dynamic RAM

Ab
3 .50*
Toshiba
TC514260DJ-60
262,144 Word x 16 Bit Dynamic RAM, 60ns

Ab
1 .34*
Toshiba
TC514400AJ-80
Beschreibung: 80 ns, 4-bit generation dynamic RAM

Ab
0 .80*
Toshiba
TC514400AZ-70
1,048,576 x 4 BIT DYNAMIC RAM, 70ns Datenblatt: TC514400A.pdf

4 .00*
Toshiba
TC514400BZ-60
1,048,576 x 4 BIT DYNAMIC RAM, 60ns Datenblatt: TC514400.pdf

Varianten ab 3,50 €*
Ab
3 .64*
Toshiba
TC51832PL-12
Beschreibung: 32,768WERD X 8-Bit CMOS Pseudo Static RAM Datenblatt: TC51832.pdf

Ab
3 .00*
Toshiba
TC518512FTL-70
Beschreibung: 512KX8 Pseudo Static RAM

Ab
1 .50*
Toshiba
TC524256BZ-80
Beschreibung: Multi-Port Dynamic RAM - 512x4 bits SAM Port

6 .00*
Toshiba
TC524258BZ-80
256K X 4 VIDEO DRAM, 80 ns, PZIP28 Mfr Package Description 0.400 INCH, PLASTIC, ZIP-28 Technology CMOS Package Shape RECTANGULAR Package Style IN-LINE Terminal Form THROUGH-HOLE Terminal Pitch 1.27 mm Terminal Finish TIN LEAD Terminal Position ZIG-ZAG Number of Functions 1 Number of Terminals 28 Package Body Material PLASTIC/EPOXY Temperature Grade COMMERCIAL Memory Width 4 Organization 256K X 4 Memory Density 1.05E6 deg Operating Mode ASYNCHRONOUS Number of Words 262144 words Number of Words Code 256K Operating Temperature-Max 70 Cel Operating Temperature-Min 0.0 Cel Supply Voltage-Max (Vsup) 5.5 V Supply Voltage-Min (Vsup) 4.5 V Supply Voltage-Nom (Vsup) 5 V Access Mode FAST PAGE Memory IC Type VIDEO DRAM Number of Ports 2 Access Time-Max (tRAC) 80 ns

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1 .75*
Toshiba
TC524259BJ-80
Beschreibung: 256k x 4 Silicon Gate CMOS Multiport DRAM

Ab
0 .60*
Toshiba
TC528128BJ-10
Beschreibung: 131,072-Word x 8-Bit Multiport RAM

Ab
0 .50*
Toshiba
TC541000AF-15
Beschreibung: 131,072 Word x 8-Bit CMOS One Time Programmable ROM

3 .50*
TelCom Semiconductor
TC54VC3401ECB718
Beschreibung: Voltage Detector Datenblatt: TC54V.pdf

Ab
0 .10*
Toshiba
TC551001CF-70L
Silikon-Gatter CMOS 131.072 Word x 8 Bit Static RAM Datenblatt: TC551001.pdf

5 .00*
Toshiba
TC551001FI-10L
Silikon-Gatter CMOS 131.072 Word x 8 Bit Static RAM Datenblatt: TC551001.pdf

5 .00*
Toshiba
TC5517APL
Beschreibung: General-Purpose Static RAM - Multiplexed I/O Number of Words=2k Bits Per Word=8 t(acc) Max. (S)=250n tW Min (S)=250n Output Config=3-State P(D) Max.(W) Power Dissipation=800m Nom. Supp (V)=5.0

2 .80*
Toshiba
TC55257APL-12
100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM Datenblatt: TC55257.pdf

Ab
3 .50*
Toshiba
TC55257BFL-10L
Beschreibung: 100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM Datenblatt: TC55257.pdf

Ab
2 .00*
Toshiba
TC55257DFL-85L
Beschreibung: 100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM Datenblatt: TC55257.pdf

2 .50*
Toshiba
TC55257DFL-85L
Beschreibung: 100ns; V(dd/in): -0.3 to +7.0V; silicon gate CMOS: 32,768 word x 8-bit staic RAM Datenblatt: TC55257.pdf

2 .20*
Toshiba
TC55417J-25
Beschreibung: 64 K CMOS Static RAM

Ab
1 .50*
Toshiba
TC5564AFL-15
Beschreibung: 8,192 WORD X 8 BIT CMOS STATIC RAM Datenblatt: TC5564.pdf

Ab
4 .50*
Toshiba
TC5564APL-15
Beschreibung: 8,192 WORD X 8 BIT CMOS STATIC RAM Datenblatt: TC5564.pdf

5 .00*
Toshiba
TC55NEM208ATGN70
Standard SRAM, 512KX8, 70ns, CMOS Sub Category: SRAMs Access Time-Max: 70.0 ns I/O Type: COMMON JESD-30 Code: R-PDSO-G32 Memory Density: 4194304.0 bit Memory IC Type: STANDARD SRAM Supply Voltage-Nom (Vsup): 5.0 V Memory Width: 8 Number of Functions: 1 Number of Terminals: 32 Number of Words: 524288.0 words Number of Words Code: 512K Operating Mode: ASYNCHRONOUS Operating Temperature-Min: -40.0 Cel Operating Temperature-Max: 85.0 Cel Organization: 512KX8

Ab
5 .24*
Toshiba
TC55NEM208ATGN70
524,288-WORD BY 8-BIT STATIC RAM - Operating: 15 mW/MHz (typical) - Single power supply voltage of 5 V ± 10% - Power down features using CE. - Data retention supply voltage of 2.0 to 5.5 V - Direct TTL compatibility for all inputs and outputs - Wide operating temperature range of ?40° to 85°C - Standby Current (maximum):20 uA Datenblatt: TC55NEM208AT.pdf

Ab
5 .00*
Toshiba
TC58NYG1S3EBAI5
2 GBIT (256M × 8 BIT) CMOS NAND E2PROM - Organization Memory cell array 2112 × 128K × 8 Register 2112 × 8 Page size 2112 bytes Block size (128K + 4K) bytes - Modes Read, Reset, Auto Page Program, Auto Block Erase, Status Read, Page Copy, Multi Page Program, Multi Block Erase, Multi Page Copy, Multi Page Read - Mode control Serial input/output Command control - Number of valid blocks Min 2008 blocks Max 2048 blocks - Power supply VCC = 1.7V to 1.95V - Access time Cell array to register 25 ?s max Serial Read Cycle 25 ns min (CL=30pF) - Program/Erase time Auto Page Program 300 ?s/page typ. Auto Block Erase 2.5 ms/block typ. - Operating current Read (25 ns cycle) 30 mA max. Program (avg.) 30 mA max Erase (avg.) 30 mA max Standby 50 ?A max Datenblatt: TC58NYG1S3EBAI5.pdf

Ab
2 .30*
Teledyne Semiconductor
TC7106CPL
Beschreibung: 3 5-Digit 7-Segment-Display-Output ADC - Direct Display Drive (LCD) Datenblatt: TC7106CPL.pdf

2 .50*
TelCom Semiconductor
TC7109ACPL
Beschreibung: 12-bit Up-compatible Analog-to-digital Converter Datenblatt: TC7109A.pdf

Ab
3 .00*
TelCom Semiconductor
TC7109CLW
12-Bit uP-Compatible Analog-To-Digital Converter Resolution: 12 bit Number of Channels: 1 Channel Interface Type: Parallel Sampling Rate: 10 S/s Input Type: Differential Architecture: Dual-Slope Analogue Supply Voltage: - 5 V to 5 V Digital Supply Voltage: 5 V to 5 V Minimum Operating Temperature: 0 C Maximum Operating Temperature: + 70 C Datenblatt: TC7109.pdf

Ab
4 .69*
Teledyne Semiconductor
TC7126ACBQ
Beschreibung: ADC Single Dual Slope 3 1/2Digit LCD Datenblatt: TC7126A.pdf

Ab
4 .50*
Toshiba
TC7SLU04FU
Beschreibung: Low Voltage Operative C²MOS Inverter Datenblatt: TC7SLU04FU.pdf

Ab
0 .05*
Toshiba
TC8566AF
Beschreibung: FLOPPY DISK CONTROLLER Datenblatt: TC8566AF.pdf

5 .00*