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Micron Technology, Inc.
MT28F400B3WG-10BETE
4MB Smart 3 Boot Block Flash Memory Datenblatt: MT28F004B3.pdf

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1 .50*
Micron Technology, Inc.
MT29F16G08ABABAWP-AIT:B
16GB NAND Flash Memory Technology: FLASH - NAND Memory Size: 16Gbit Memory Organization: 2G x 8 Memory Interface: Parallel Timing Type: Asynchronous Data Bus Width: 8 bit Voltage - Supply: 2.7V to 3.6V Supply Current - Max: 50 mA Operating Temperature TA: -40°C to 85°C Datenblatt: MT29F16G08ABABAWP.pdf

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20 .00*
Micron Technology, Inc.
MT46V32M16P-6P IT:F
Beschreibung: 512MB, 32Mx16, Double Data Rate (DDR) SDRAM Datenblatt: MT46V32M16P.pdf

8 .00*
Micron Technology, Inc.
MT48LC16M16A2P-6A IT:G
265MB SDR SDRAM Data Bus Width: 16 bit Organisation: 16 M x 16 Memory Size: 256 Mbit Maximum Clock Frequency: 167 MHz Access Time: 7.5 ns Supply Voltage - Max: 3.6 V Supply Voltage - Min: 3 V Supply Current - Max: 135 mA Minimum Operating Temperature: 0 C Maximum Operating Temperature: + 70 C Datenblatt: MT48LC16M16.pdf

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4 .71*
Micron Technology, Inc.
MT48LC16M16A2P-7E:D
265MB SDR SDRAM - PC100- and PC133-compliant - Fully synchronous; all signals registered on positive edge of system clock - Internal, pipelined operation; column address can be changed every clock cycle - Internal banks for hiding row access/precharge - Programmable burst lengths: 1, 2, 4, 8, or full page - Auto precharge, includes concurrent auto precharge and auto refresh modes - Self refresh mode (not available on AT devices) - Auto refresh – 64ms, 8192-cycle (commercial and industrial) – 16ms, 8192-cycle (automotive) - LVTTL-compatible inputs and outputs - Single +3.3V ±0.3V power supply Datenblatt: MT48LC16M16.pdf

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2 .70*
Micron Technology, Inc.
MT48LC16M16A2TG-75
265MB SDR SDRAM Datenblatt: MT48LC16M16.pdf

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4 .57*
Micron Technology, Inc.
MT48LC2M32B2P-7:G
Beschreibung: SDR SDRAM 512K x 32 x 4 Banks Datenblatt: MT48LC2M32B.pdf

2 .00*
Micron Technology, Inc.
MT48LC4M32B2TG-7 IT:G
DRAM Chip SDR SDRAM 128M-Bit 4Mx32 3.3V - PC100 functionality - Fully synchronous; all signals registered on positive edge of system clock - Internal pipelined operation; column address can be changed every clock cycle - Internal banks for hiding row access/precharge - Programmable burst lengths: 1, 2, 4, 8, or full page - Auto precharge, includes concurrent auto precharge, and auto refresh modes - Self refresh mode (not available on AT devices) - Auto refresh: 64ms, 4,096-cycle refresh (15.6?s/row) (commercial & industrial) – 16ms, 4,096-cycle refresh (3.9?s/row) (automotive) - LVTTL-compatible inputs and outputs - Single +3.3V ±0.3V power supply - Supports CAS latency (CL) of 1, 2, and 3 Datenblatt: MT48LC4M32B2.pdf

6 .76*
Micron Technology, Inc.
MT48LC8M16A2P-75:D
SDRAM 128Mbit 8Mx16 DRAM Type: SDRAM Chip Density (bit): 128M Organization: 8Mx16 Number of Internal Banks: 4 Number of Words per Bank: 2M Number of Bits/Word: 16bit Data Bus Width: 16 bit Maximum Clock Rate: 133MHz Maximum Access Time: 5.4/6 ns Address Bus Width (bit): 14 Process Technology: CMOS Interface Type: LVTTL Minimum Operating Supply Voltage: 3V Typical Operating Supply Voltage: 3.3V Maximum Operating Supply Voltage: 3.6V Operating Current; 150mA Minimum Operating Temperature: 0 C Maximum Operating Temperature: 70 C Datenblatt: MT48LC8M16A2P-75:D.pdf

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3 .80*
Micron Technology, Inc.
MT55L256L18P1T-6
Beschreibung: 256KX18 PIPELINED ZBT SRAM Datenblatt: MT55L256L18P1.pdf

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3 .50*
Micron Technology, Inc.
MT55L64L32PT-10
Beschreibung: 2Mb: 64K x 32 3.3V I/O, PIPELINED ZBT SRAM Datenblatt: MT55L64L32PT.pdf

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1 .80*
Micron Technology, Inc.
MT58L256L32FS-7.5
Beschreibung: 8 MB Syncbusrt(TM) SRAM Datenblatt: MT58L256L32F.pdf

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5 .00*
Micron Technology, Inc.
MT5C2568DJ-25
Beschreibung: 32K x 8 SRAM Datenblatt: MT5C2568.pdf

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2 .00*
Mitel Semiconductor
MT8816AE
Beschreibung: 8 x 16 Analog Switch Array Datenblatt: MT8816AE.pdf

20 .00*
Mitel Semiconductor
MT8870DE
Integrated DTMF Receiver Datenblatt: MT8870D.pdf

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2 .37*
Zarlink Semiconductor
MT8870DE
Integrated DTMF Receiver DC Power Supply Voltage VDD: 7V Current at any pin Ii: 10 mA Operating Temperature: -40°C ~ 85°C Package power dissipation PD: 500mW Datenblatt: MT8870D.pdf

2 .50*
Mitel Semiconductor
MT8941AP
Beschreibung: CMOS ST-BUS FAMILY Advanced T1/CEPT Digital Trunk PLL Datenblatt: MT8941.pdf

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4 .25*
Mitel Semiconductor
MT9041BPR
T1/E1 System Synchronizer - Supports AT&T TR62411 and Bellcore GR-1244-CORE Stratum 4 Enhanced and Stratum 4 timing for DS1 Interfaces - Supports ETSI ETS 300 011, TBR 4, TBR 12 and TBR 13 timing for E1 Interfaces - Selectable 1.544MHz, 2.048MHz or 8kHz input reference signals Supply voltage VDD: 4.5 - 5.5 V Voltage on any pin VPIN: -0.3 VDD+0.3 V Current on any pin IPIN: 20 mA Storage temperature TST: -55 125 °C PLCC package power dissipation PPD: 900 mW > Datenblatt: MT9041B.pdf

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7 .15*
Mitel Semiconductor
MT9076AB
Beschreibung: T1/E1/J1 3.3V Single Chip Transceiver Datenblatt: MT9076AB.pdf

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6 .00*
Microchip
MTCH652T-I/MV
Programmable Voltage Boost with Built-in Level Shifters and Serial Interface with Output Enable 19 High Voltage I/O Lines Built-in Boost Internal Switch 1.8V to 5.5V Input Operating Range Low Quiescent Current:

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2 .33*
Shindengen Inc.
MTD2005F
Beschreibung: Stepper Motor Driver IC Datenblatt: MTD2005F.pdf

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3 .50*