16GB NAND Flash Memory
Technology: FLASH - NAND
Memory Size: 16Gbit
Memory Organization: 2G x 8
Memory Interface: Parallel
Timing Type: Asynchronous
Data Bus Width: 8 bit
Voltage - Supply: 2.7V to 3.6V
Supply Current - Max: 50 mA
Operating Temperature TA: -40°C to 85°C
Datenblatt:
MT29F16G08ABABAWP.pdf
265MB SDR SDRAM
Data Bus Width: 16 bit
Organisation: 16 M x 16
Memory Size: 256 Mbit
Maximum Clock Frequency: 167 MHz
Access Time: 7.5 ns
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 3 V
Supply Current - Max: 135 mA
Minimum Operating Temperature: 0 C
Maximum Operating Temperature: + 70 C
Datenblatt:
MT48LC16M16.pdf
265MB SDR SDRAM
- PC100- and PC133-compliant
- Fully synchronous; all signals registered on positive edge of system clock
- Internal, pipelined operation; column address can be changed every clock cycle
- Internal banks for hiding row access/precharge
- Programmable burst lengths: 1, 2, 4, 8, or full page
- Auto precharge, includes concurrent auto precharge and auto refresh modes
- Self refresh mode (not available on AT devices)
- Auto refresh
– 64ms, 8192-cycle (commercial and industrial)
– 16ms, 8192-cycle (automotive)
- LVTTL-compatible inputs and outputs
- Single +3.3V ±0.3V power supply
Datenblatt:
MT48LC16M16.pdf
DRAM Chip SDR SDRAM 128M-Bit 4Mx32 3.3V
- PC100 functionality
- Fully synchronous; all signals registered on positive edge of system clock
- Internal pipelined operation; column address can be changed every clock cycle
- Internal banks for hiding row access/precharge
- Programmable burst lengths: 1, 2, 4, 8, or full page
- Auto precharge, includes concurrent auto precharge, and auto refresh modes
- Self refresh mode (not available on AT devices)
- Auto refresh: 64ms, 4,096-cycle refresh (15.6?s/row) (commercial & industrial)
– 16ms, 4,096-cycle refresh (3.9?s/row) (automotive)
- LVTTL-compatible inputs and outputs
- Single +3.3V ±0.3V power supply
- Supports CAS latency (CL) of 1, 2, and 3
Datenblatt:
MT48LC4M32B2.pdf
SDRAM 128Mbit 8Mx16
DRAM Type: SDRAM
Chip Density (bit): 128M
Organization: 8Mx16
Number of Internal Banks: 4
Number of Words per Bank: 2M
Number of Bits/Word: 16bit
Data Bus Width: 16 bit
Maximum Clock Rate: 133MHz
Maximum Access Time: 5.4/6 ns
Address Bus Width (bit): 14
Process Technology: CMOS
Interface Type: LVTTL
Minimum Operating Supply Voltage: 3V
Typical Operating Supply Voltage: 3.3V
Maximum Operating Supply Voltage: 3.6V
Operating Current; 150mA
Minimum Operating Temperature: 0 C
Maximum Operating Temperature: 70 C
Datenblatt:
MT48LC8M16A2P-75:D.pdf
Integrated DTMF Receiver
DC Power Supply Voltage VDD: 7V
Current at any pin Ii: 10 mA
Operating Temperature: -40°C ~ 85°C
Package power dissipation PD: 500mW
Datenblatt:
MT8870D.pdf
T1/E1 System Synchronizer
- Supports AT&T TR62411 and Bellcore GR-1244-CORE Stratum 4 Enhanced and Stratum 4 timing for DS1 Interfaces
- Supports ETSI ETS 300 011, TBR 4, TBR 12 and TBR 13 timing for E1 Interfaces
- Selectable 1.544MHz, 2.048MHz or 8kHz input reference signals
Supply voltage VDD: 4.5 - 5.5 V
Voltage on any pin VPIN: -0.3 VDD+0.3 V
Current on any pin IPIN: 20 mA
Storage temperature TST: -55 125 °C
PLCC package power dissipation PPD: 900 mW
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Datenblatt:
MT9041B.pdf
Programmable Voltage Boost with Built-in Level Shifters and Serial Interface with Output Enable
19 High Voltage I/O Lines
Built-in Boost
Internal Switch
1.8V to 5.5V Input Operating Range
Low Quiescent Current: