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ESMT / EliteMT
M12L16161A-5TG
Beschreibung: 512K x 16Bit x 2Banks Synchronous DRAM Datenblatt: M12L16161A.pdf

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1 .00*
Telefunken
M195411S

3 .50*
Telefunken
M195412S

3 .50*
Mindspeed Technologies, Inc
M21024G-11P
11.88 Gbps 24x24 Asynchronous Crosspoint Switch with Equalizer and De-emphasis - 24x24 non-blocking crosspoint switch - Enables channels up to 40" at 11.3 Gbps data rate - Data rates from 100 Mbps to 11.3 Gbps - Integrated Pattern Generator & Checker - Jitter measurement tool - Programmable output de-emphasis up to 10.5 dB - Individual lane LOS (Loss Of Signal) detection and squelch - Electrical Idle (EI pass-through for PCIe, SAS, and SATA signaling support) Datenblatt: M21024G.pdf

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100 .00*
ST-Microelectronics
M24C04-WMN6P
4 Kbit serial I²C bus EEPROM Datenblatt: M24C04.pdf

0 .25*
ST-Microelectronics
M24C04-WMN6TP
Beschreibung: 4 Kbit serial I²C bus EEPROM Datenblatt: M24C04.pdf

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0 .20*
ST-Microelectronics
M24C08-WMN3TP
EEPROM Serial-I2C 8K-bit 1K x 8 Interface Type: 2-Wire, I2C Memory Size: 8 kbit Organisation: 1 k x 8 Supply Voltage - Min: 2.5 V Supply Voltage - Max: 5.5 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 85 C Maximum Clock Frequency: 400 kHz Access Time: 900 ns Supply Current - Max: 2 mA Datenblatt: M24C08.pdf

0 .67*
ST-Microelectronics
M24C32-FMC6TG
Beschreibung: 32-Kbit serial I²C bus EEPROM Datenblatt: M24C32.pdf

Ab
0 .10*
ST-Microelectronics
M24C32-RMB6TG
Beschreibung: 32-Kbit serial I²C bus EEPROM Datenblatt: M24C32.pdf

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0 .20*
ST-Microelectronics
M27256-2F1
NMOS 256K (32K x 8) UV EPROM - Memory Size: 256 kbit - Organisation: 32 k x 8 - Interface Type: Parallel - Operating Supply Current: 100 mA - Programming Voltage: 12.5 V - Operating Supply Voltage: 5 V - Minimum Operating Temperature: 0 C - Maximum Operating Temperature: + 70 C Datenblatt: M27256.pdf

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5 .00*
ST-Microelectronics
M2764AF1

Ab
4 .35*
ST-Microelectronics
M27C1000-25XF1
Beschreibung: CMOS 1 Megabit (128K x 8) UV EPROM Datenblatt: M27C1000.pdf

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2 .25*
ST-Microelectronics
M27C1001-10F1
1 Mbit (128 Kbit x 8) UV EPROM - 5v ± 10% Supply Voltage in Read Operation - Access Time: 35ns - Low Power Consumption: – Active Current: 30 mA at 5 MHz – Standby Current: 100 ?A - Programming Voltage: 12.75V ± 0.25V - Programming Time: 100 ?s/word Datenblatt: M27C1001.pdf

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2 .50*
ST-Microelectronics
M27C1001-10F1L
Beschreibung: 1 Mbit (128 Kbit x 8) UV EPROM Datenblatt: M27C1001.pdf

3 .60*
ST-Microelectronics
M27C1001-70F1
1 Mbit (128 Kbit x 8) UV EPROM - 5v +- 10% Supply Voltage in Read Operation - Access Time: 35ns - Low Power Consumption – Active Current: 30 mA at 5 MHz – Standby Current: 100 uA - Programming Voltage: 12.75V ± 0.25V - Programming Time: 100 us/word - Electronic Signature – Manufacturer Code: 20h – Device Code: 05h > Datenblatt: M27C1001.pdf

6 .50*
ST-Microelectronics
M27C1024-10F1
1 Mbit (64Kb x16) UV EPROM - 5V +- 10% SUPPLYVOLTAGE in READ OPERATION - FASTACCESS TIME: 100ns - LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100mA - PROGRAMMING VOLTAGE: 12.75V +- 0.25V - PROGRAMMINGTIME: 100ms/byte (typical) - ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code: 008Ch Datenblatt: M27C1024.pdf

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4 .51*
ST-Microelectronics
M27C1024-12F1
1 Mbit (64Kb x16) UV EPROM - 5V +- 10% SUPPLYVOLTAGE in READ OPERATION - FASTACCESS TIME: 35ns - LOW POWER CONSUMPTION: – Active Current 35mA at 5MHz – Standby Current 100mA - PROGRAMMING VOLTAGE: 12.75V +- 0.25V - PROGRAMMINGTIME: 100ms/byte (typical) - ELECTRONIC SIGNATURE – Manufacturer Code: 0020h – Device Code: 008Ch Datenblatt: M27C1024.pdf

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4 .00*
ST-Microelectronics
M27C2001-70XF1
2 Mbit (256Kb x 8) UV EPROM Datenblatt: M27C2001.pdf

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2 .74*
ST-Microelectronics
M27C256B-10F1
256 Kbit (32Kb × 8) UV EPROM - 5V ± 10% supply voltage in Read operation - Access time: 45ns - Low power consumption: – Active Current 30mA at 5MHz – Standby Current 100uA - Programming voltage: 12.75V ± 0.25V - Programming time: 100us/Word - Electronic signature – Manufacturer Code: 20h – Device Code: 8Dh Datenblatt: M27C256B.pdf

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2 .90*
ST-Microelectronics
M27C256B-10F1L
256 Kbit (32Kb × 8) UV EPROM Memory Size: 256 kB Organisation: 32 k x 8 Interface Type: Parallel Operating Supply Current: 50 mA Programming Voltage: 12.75 V Supply Voltage - Min: 4.5 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 70 C Datenblatt: M27C256B.pdf

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3 .80*
ST-Microelectronics
M27C256B-12C1
Beschreibung: 256 Kbit (32Kb × 8) EPROM Datenblatt: M27C256B.pdf

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1 .00*
ST-Microelectronics
M27C256B-15F1
Beschreibung: 256 Kbit (32Kb × 8) UV EPROM Datenblatt: M27C256B.pdf

4 .00*
ST-Microelectronics
M27C256B-70C6
256 Kbit (32Kb × 8) EPROM Datenblatt: M27C256B.pdf

2 .50*
ST-Microelectronics
M27C4002-12F1
4 Mbit (256Kb x16) UV EPROM Memory Size: 4 MB Organisation: 256 k x 16 Interface Type: Parallel Operating Supply Current: 70 mA Programming Voltage: 12.75 V Supply Voltage - Max: 5 V Supply Voltage - Min: 5 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 125 C Datenblatt: M27C4002.pdf

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4 .00*
ST-Microelectronics
M27C512-10C1
Beschreibung: 512 Kbit OTP EPROM Datenblatt: M27C512.pdf

1 .80*
ST-Microelectronics
M27C512-10F1
512 Kbit (64K x8) UV EPROM Datenblatt: M27C512.pdf

3 .80*
ST-Microelectronics
M27C512-12F1L
512 Kbit (64K x8) UV EPROM Datenblatt: M27C512.pdf

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4 .30*
ST-Microelectronics
M27C512-20C1
Beschreibung: 512 Kbit OTP EPROM Datenblatt: M27C512.pdf

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2 .50*
ST-Microelectronics
M27C64A-15F1L
EPROM 64K (8Kx8) 150ns Memory Size: 64 kB Organisation: 8 k x 8 Interface Type: Parallel Operating Supply Current: 30 mA Programming Voltage: 12.5 V Supply Voltage - Min: 4.5 V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 70 C Datenblatt: M27C64A.pdf

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3 .96*
ST-Microelectronics
M28F101-120K1
Beschreibung: 1 Megabit -128k X 8, Chip Erase- Flash Memory Datenblatt: M28F101.pdf

Ab
2 .00*
ST-Microelectronics
M28F101-150PI
1 Megabit -128k X 8, Chip Erase- Flash Memory FAST ACCESS TIME: 70ns Standby Current: 100mA Max 10,000 ERASE/PROGRAM CYCLES 12V PROGRAMMING VOLTAGE TYPICAL BYTE PROGRAMING TIME 10ms ELECTRICAL CHIP ERASE in 1s RANGE INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS Datenblatt: M28F101.pdf

6 .00*
ST-Microelectronics
M29F010B-70K1
1 Mbit (128Kb x8, Uniform Block) Single Supply Flash Memory - SUPPLY VOLTAGE: 5V ± 10% Supply Voltage for Program, Erase and Read operations - FAST ACCESS TIME: 35ns - FAST PROGRAMMING TIME: 10ms typical - PROGRAMERASE CONTROLLER (P/E.C.): Program Byte-by-Byte / Status Register bits - MEMORY BLOCKS: 8 Uniform Blocks - BLOCK ERASE: Block, Multi-Block and Chip Erase - MULTI BLOCK PROTECTION - ERASE SUSPEND and RESUME MODES: Read or Program another Block during / Erase Suspend - BYPASS MODE: Reduces overall programming time when issuing multiple program command sequences - LOW POWER CONSUMPTION: Stand-by and Automatic Stand-by / 100,000 program/erase cycles per block / 20 Years of Data Datenblatt: M29F010B.pdf

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1 .00*
ST-Microelectronics
M29F040B-120K1
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory - SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS - ACCESS TIME: 45ns - PROGRAMMING TIME – 8 us per Byte typical - 8 UNIFORM 64 Kbytes MEMORY BLOCKS - PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits - ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend - UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming - LOW POWER CONSUMPTION – Standby and Automatic Standby - 100,000 PROGRAM/ERASE CYCLES per BLOCK Datenblatt: M29F040B.pdf

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2 .21*
ST-Microelectronics
M29F040B-55N1
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory Datenblatt: M29F040B.pdf

Ab
2 .50*
ST-Microelectronics
M29F040B-70K1
4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory - SINGLE 5V ± 10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS - ACCESS TIME: 45ns - PROGRAMMING TIME – 8 us per Byte typical - 8 UNIFORM 64 Kbytes MEMORY BLOCKS - PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm – Embedded Multi-Block/Chip Erase algorithm – Status Register Polling and Toggle Bits - ERASE SUSPEND and RESUME MODES – Read and Program another Block during Erase Suspend - UNLOCK BYPASS PROGRAM COMMAND – Faster Production/Batch Programming - LOW POWER CONSUMPTION – Standby and Automatic Standby - 100,000 PROGRAM/ERASE CYCLES per BLOCK Datenblatt: M29F040B.pdf

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1 .75*
ST-Microelectronics
M29F040B45K6E
Beschreibung: 4 Mbit (512Kb x8, Uniform Block) Single Supply Flash Memory Datenblatt: M29F040B.pdf

3 .20*
ST-Microelectronics
M29W040B-55K6
4 Mbit (512Kb x8, Uniform Block) Low Voltage Single Supply Flash Memory Memory Type: Non-Volatile Memory Format: FLASH Technology: FLASH - NOR Memory Size: 4Mb (512K x 8) Memory Interface: Parallel Write Cycle Time - Word, Page: 55ns Access Time: 55ns Voltage - Supply: 2.7V to 3.6V Operating Temperature: -40C to 85C (TA) Datenblatt: M29F040B.pdf

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2 .04*
ST-Microelectronics
M29W160DT-70N6
Beschreibung: 16 Mbit 2Mb x8 or 1Mb x16, Boot Block 3V Supply Flash Memory Datenblatt: M29W160DT.pdf

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4 .50*
Micron Technology, Inc.
M29W160EB70ZA6F
16Mb (2Mb x8 or 1Mb x16) Parallel NOR Flash Embedded Memory Memory Size: 16 Mbit Supply Voltage - Min: 2.7 V Supply Voltage - Max: 3.6 V Active Read Current - Max: 10 mA Interface Type: Parallel Organisation: 2 M x 8/1 M x 16 Data Bus Width: 8 bit/16 bit Timing Type: Asynchronous Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 85 C Datenblatt: M29W160EB.pdf

Ab
1 .84*
Micron Technology, Inc.
M29W640GB70NA6E
Beschreibung: 64Mb: 3V Embedded Parallel NOR Flash Datenblatt: M29W640.pdf

Ab
0 .90*