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Samsung

K4S161622E-TC70

Beschreibung: 512K x 16bit x 2 Banks Synchronous DRAM LVTTL Datenblatt: K4S161622E.pdf

€ 3 .00*

Samsung

K4S641632E-TI75

Beschreibung: 64Mbit - 1M x 16Bit x 4 Banks Synchronous DRAM Datenblatt: K4S641632E.pdf

€ 2 .75*

Samsung

K4T1G084QD-ZCE6

1 Gb (128Mx8) DDR2-667 5-5-5 SDRAM JEDEC standard VDD = 1.8V ± 0.1V Power Supply VDDQ = 1.8V ± 0.1V Burst Length: 4 , 8(Interleave/Nibble sequential) Programmable Sequential / Interleave Burst Mode Off-Chip Driver(OCD) Impedance Adjustment On Die Termination Datenblatt: K4T1G084QD.pdf

€ 2 .75*

Samsung

K4T1G164QF-BCF7

1GB (64Mx16) F-die DDR2 SDRAM Datenblatt: K4T1G164QF.pdf

€ 4 .78*

Samsung

K6T0808C1D-GF70

32Kx8 bit Low Power CMOS Static RAM Datenblatt: K6T0808C1D.pdf

€ 1 .91*

Samsung

K6T0808C1D-GL70

Beschreibung: 32Kx8 bit Low Power CMOS Static RAM Datenblatt: K6T0808C1D.pdf

€ 2 .25*

Samsung

K6T1008C2E-GB70

128K x 8 bit Low Power CMOS Static RAM Datenblatt: K6T1008C2E.pdf

€ 0 .77*

Samsung

K6T1008C2E-GL55

Beschreibung: 128K x 8 bit Low Power CMOS Static RAM Datenblatt: K6T1008C2E.pdf

€ 2 .20*

Samsung

K6X0808C1D-GF55

32Kx8 bit Low Power Full CMOS Static RAM Process Technology: Full CMOS Organization: 32K x 8 Power Supply Voltage: 4.5-5.5V Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible

€ 2 .33*

Samsung

K6X1008C2D-PF55

128Kx8 bit Low Power CMOS Static RAM - Process Technology: Full CMOS - Organization: 128K x 8 - Power Supply Voltage: 4.5 - 5.5V - Standby ISB1, Max = 15uA - Operating ICC2, Max = 25mA - Low Data Retention Voltage: 2V(Min) - Three state output and TTL Compatible - Operating Temperature: Industrial (-40 - 85 Grad) Datenblatt: K6X1008C2D.pdf

€ 1 .34*

Samsung

K6X1008T2D-PF70

Beschreibung: 128Kx8 bit Low Power CMOS Static RAM Datenblatt: K6X1008.pdf

€ 1 .50*

Samsung

KM41256AP-12

256k X 1 Bit Dynamic RAM With Page / Nibble Mode Datenblatt: KM41256A.pdf

€ 3 .50*

Samsung

KM4132G512Q-10

Beschreibung: 256K x 32Bit x 2 Banks Synchronous Graphic RAM

€ 1 .50*

Samsung

KM4164B-10

Beschreibung: 100ns V(cc): -1to +7.5V V(in/out): -2 to +7V 1W 50mA 64K x 1-bit dynamic RAM with page mode Datenblatt: KM4164B.pdf

€ 1 .00*

Samsung

KM41C256J-7

Beschreibung: 256k CMOS Dynamic RAM

€ 1 .25*

Samsung

KM41C464Z-8

Beschreibung: 256K, 64Kx4, 80ns, General Purpose Dynamic RAM - Fast page mode, TTL compatible

€ 1 .00*

Samsung

KM4232W259AQ-50

Beschreibung: 1M Byte Dual Ported DRAM Datenblatt: KM4232W259A.pdf

€ 3 .10*

Samsung

KM432S2030CT-GC

Beschreibung: 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL Datenblatt: KM432S2030C.pdf

€ 0 .80*

Samsung

KM62256ALP-10

Beschreibung: 32Kx8 bit Low Power CMOS Static RAM Datenblatt: KM62256.pdf

€ 2 .25*

Samsung

KM62256BLG-8

32Kx8 bit Low Power CMOS Static RAM Datenblatt: KM62256.pdf

€ 2 .00*

Samsung

KM62256BLP7

32Kx8 bit Low Power CMOS Static RAM Datenblatt: KM62256.pdf

€ 4 .75*

Samsung

KM681000ALG-10

128K x8 bit Low Power CMOS Static RAM Datenblatt: KM681000.pdf

€ 10 .00*

Samsung

KM681000ELT-5L

128K x8 bit Low Power CMOS Static RAM Power Supply Voltage: 4.5 to 5.5V Organization: 128Kx8 Low Data Retention Voltage: 2V(Min) Power Dissipation: 1.0W Operating Temperature: 0C to 70C Datenblatt: KM681000E.pdf

€ 5 .56*

I-Cube

KQX320PB416

Beschreibung: Special Function ASIC

€ 8 .00*

Microchip

KSZ8841-PMQLI

Ethernet ICs 10/100 Product: Ethernet Controllers Standard: 10BASE-T, 100BASE-TX Number of Transceivers: 1 Transceiver Data Rate: 10 Mb/s, 100 Mb/s Interface Type: MDI, MDI-X, PCI Operating Supply Voltage: 3.3 V Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 85 C KSZ8841.pdf

€ 10 .00*

Intel

KU80960CA25

Beschreibung: 32-bit High-Performance Embedded Microprocessor Datenblatt: KU80960CA.pdf

€ 15 .00*