ARM Microprocessor
Core: ARM926EJ-S
Number of Cores: 1 Core
Data RAM Size: 8 kB, 128 kB
Data ROM Size: 64 kB
I/O Voltage: 1.8 V, 3.3 V
Interface Type: Ethernet, I2C, SPI, UART, USB
Memory Type: L1 Cache, RAM, ROM
Data Bus Width: 32 bit/16 bit
Maximum Clock Frequency: 375 MHz
L1 Cache Instruction Memory: 16 kB
L1 Cache Data Memory: 16 kB
Operating Supply Voltage: 1.2 V
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 105 C
Quadruple Differential Line Driver
Data Rate: 10 Mb/s
Number of Drivers: 1 Driver
Supply Voltage - Max: 5.25 V
Supply Voltage - Min: 4.75 V
Operating Supply Current: 80 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Quadruple Differential Line Receiver
Function: Receiver
Data Rate: 10 Mb/s
Number of Receivers: 4 Receiver
Supply Voltage - Max: 5.25 V
Supply Voltage - Min: 4.75 V
Operating Supply Current: 70 mA
Minimum Operating Temperature: 0 C
Maximum Operating Temperature: + 70 C
1 Megabit (65 K x 16-Bit) CMOS EPROM
Supply Read Voltages: +4.50 V to +5.50 V
Access time: 200ns
Latch-up protected to 100 mA from –1 V to VCC + 1 V
Ambient Temperature (TA): 0C to +70C
High noise immunity
Low power consumption
Datenblatt:
AM27C1024.pdf
256K (32K x 8) CMOS EPROM
Low power consumption
— 20 ?A typical CMOS standby current
JEDEC-approved pinout
Single +5 V power supply
±10% power supply tolerance standard
100% Flashrite™ programming
— Typical programming time of 4 seconds
Latch-up protected to 100 mA from –1 V to VCC + 1 V
High noise immunity
Versatile features for simple interfacing
— Both CMOS and TTL input/output compatibility
— Two line control functions
Datenblatt:
AM27C256.pdf
64 Kilobit (8,192 x 8-Bit) CMOS EPROM
- Fast access time: 45 ns
- Low power consumption 20 uA typical CMOS standby current
- JEDEC-approved pinout
- Single +5 V power supply
- +-10% power supply tolerance available
- 100% FlashriteTM programming
- Typical programming time of 1 second
- Latch-up protected to 100 mA from –1 V to VCC + 1 V
- High noise immunity
- Versatile features for simple interfacing, Both CMOS and TTL input/output compatibility
Datenblatt:
AM27C64.pdf
2 Megabit (256 K x 8-Bit) CMOS 5.0 Volt-only Boot Sector Flash Memory
Location of Boot Block: Top sector
Typical Operating Supply Voltage: 5V
Number of Words: 256K
Number of Bits/Word: 8 Bit
Max. Access Time: 90ns
Datenblatt:
AM29F002T.pdf
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Memory Size: 1 Mbit
Interface Type: Parallel
Organisation: 128 k x 8
Timing Type: Asynchronous
Data Bus Width: 8 bit
Supply Voltage - Min: 4.5 V
Supply Voltage - Max: 5.5 V
Supply Current - Max: 30 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Memory Type: NOR
Speed: 45 ns
Architecture: Sector
Datenblatt:
AM29F010B.pdf
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Memory Size: 1 Mbit
Interface Type: Parallel
Organisation: 128 k x 8
Timing Type: Asynchronous
Data Bus Width: 8 bit
Supply Voltage - Min: 4.5 V
Supply Voltage - Max: 5.5 V
Supply Current - Max: 30 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 85 C
Memory Type: NOR
Speed: 70 ns
Architecture: Sector
Datenblatt:
AM29F010B.pdf
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
- Memory Size: 1 Mbit
- Interface Type: Parallel
- Memory Type: NOR
- Speed: 70 ns
- Supply Voltage - Max: 5.5 V
- Supply Voltage - Min: 4.5 V
- Supply Current - Max: 30 mA
- Operating Temperature Range: - 40 C to + 85 C
Datenblatt:
AM29F010B.pdf
NOR Flash Parallel 5V 1M-bit 128K x 8 90ns
Cell Type: NOR
Chip Density (bit): 1M
Architecture: Sectored
Boot Block: No
Block Organization: Symmetrical
Typical Operating Supply Voltage: 5V
Address Bus Width (bit): 17
Sector Size: 16Kbyte x 8
Number of Bits/Word (bit): 8
Number of Words: 128K
Datenblatt:
AM29F010.pdf
8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
5.0 V +- 10%, single power supply operation
Manufactured on 0.32 ?m process technology
Access times as fast as 120 ns
25 mA typical active read current
30 mA typical program/erase current
1 uA typical standby current
16 uniform sectors of 64 Kbytes each
Any combination of sectors can be erased
20-year data retention at 125 Grad
Datenblatt:
AM29F080B.pdf
8 Megabit (1 M x 8-Bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
5.0 V +- 10%, single power supply operation
Manufactured on 0.32 ?m process technology
Access times as fast as 120 ns
25 mA typical active read current
30 mA typical program/erase current
1 uA typical standby current
16 uniform sectors of 64 Kbytes each
Any combination of sectors can be erased
20-year data retention at 125 Grad
Datenblatt:
AM29F080B.pdf