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Micropac Industries
4N23
A Gallium Aluminum Arsenide (GaAlAs) infrared LED and a high gain N-P-N silicon phototransistor packaged in a
hermetically sealed metal case
Input to Output Voltage ±1 kV
Emitter-Collector Voltage 7 V
Collector-Emitter Voltage 40 V
Collector-Base Voltage 45 V
Reverse Input Voltage 2 V
Input Diode Continuous Forward Current at (or below) 25°C Free-Air Temperature (Note 1) 40mA
Peak Forward Input Current (Value applies for tw < 1 PRR < 300 pps) 1 A
Continuous Collector Current 50 mA
Continuous Transistor Power Dissipation at (or below) 25°C Free-Air Temperature (Note 2) 300 mW
Storage Temperature -65°C to +125°C
Operating Free-Air Temperature Range -55°C to +125°C
Lead Solder Temperature (10 seconds max., 1/16” from case) 240°C
Datenblatt:
4N23.pdf
€
14
.00*
Telefunken
4N35
Beschreibung: Optocoupler, Phototransistor Output, with Base Connection
Datenblatt:
4N35.pdf
€
0
.08*
Vishay
4N36
Optocoupler, Phototransistor Output, with Base Connection
Datenblatt:
4N36.pdf
€
0
.15*
Fairchild
4N37
Optocoupler, Phototransistor Output
Operating Temperature Topr -55 to +100 °C
Total Device Power Dissipation: 250mW
DC/Average Forward Input Current If: 100mA
Reverse Input Voltage Vr= 6V
Forward Current Peak If(pk)=3A
LED Power Dissipation Pd=150mW
Collector-Emitter Voltage Vceo=30V
Collector-Base Voltage Vcbo=70V
Emitter-Collector Voltage Veco=7V
Input-Output Isolation Voltage: Viso=5300Vac
Datenblatt:
4N37.pdf
€
0
.12*