DIODEN

ON-Semiconductor

1.5SMC33AT3G

ESD Suppressors / TVS Diodes 33V 1.5KW Product Type: TVS Diodes Polarity: Bidirectional Working Voltage: 28.2 V Breakdown Voltage: 31.4 V Clamping Voltage: 45.7 V Pppm - Peak Pulse Power Dissipation: 1.5 kW Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C

€ 0 .22*

Littlefuse

1.5SMC33CA

€ 0 .17*

Taiwan Semiconductor Co.,Ltd.

1.5SMC33CA R6

€ 0 .17*

PANJIT Semiconductor

1.5SMCJ30CA

ESD Suppressors / TVS Diodes Polarity: Bidirectional Working Voltage: 30 V Number of Channels: 1 Channel Breakdown Voltage: 33.3 V Clamping Voltage: 8.4 V Pppm - Peak Pulse Power Dissipation: 1.5 kW Vesd - Voltage ESD Contact: 30 kV Vesd - Voltage ESD Air Gap: 30 kV Ipp - Peak Pulse Current: 31 A Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 150 C Datenblatt: 1.5SMCJ30CA.pdf

€ 0 .14*

Vishay

15MQ040N

Beschreibung: High Performance Schottky Rectifier, 3 A Datenblatt: 15MQ040N.pdf

€ 0 .15*

New Jersey Semiconductor

1N3161B

Silicon Power Rectifier 50V / 240A Forward Voltage VF: 1V Reverse Current IR: 75µA Output Current IOUT: 175A Reverse Breakdown Voltage VBR: 50V Max average forward current IF(AV): 240A Datenblatt: 1N3161.pdf

€ 14 .00*

Microsemi

1N6053A

ESD Suppressors / TVS Diodes TVS Product Type: TVS Diodes Polarity: Bidirectional Working Voltage: 33 V Number of Channels: 1 Channel Termination Style: Axial Breakdown Voltage: 41 V Clamping Voltage: 53.9 V Pppm - Peak Pulse Power Dissipation: 1.5 kW Ipp - Peak Pulse Current: 28 A Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 175 C

€ 15 .00*

ON-Semiconductor

1SMA33AT3G

Beschreibung: 400 Watt SMA Transient Voltage Suppressor, 33 V Unidirectional Datenblatt: 1SMA33A.pdf

€ 0 .05*

International Rectifier

40CPQ060

Beschreibung: SCHOTTKY RECTIFIER 60V/40A Datenblatt: 40CPQ060.pdf

€ 2 .20*

International Rectifier

80CPQ150PbF

Beschreibung: Schottky Rectifier, 2 x 40 A Datenblatt: 80CPQ150.pdf

€ 2 .00*

Diodes Inc.

B130B-13

Description: Schottky Barrier Rectifiers 30V / 1A Datenblatt: B130B.pdf

€ 0 .08*

Temic Semiconductor

BA979-GS08

Beschreibung: RF PIN Diode Datenblatt: BA979.pdf

€ 0 .05*

Temic Semiconductor

BA979S-GS08

Beschreibung: RF PIN Diode Datenblatt: BA979S.pdf

€ 0 .05*

Temic Semiconductor

BA982-GS08

Beschreibung: Band Switching Diode Datenblatt: BA982.pdf

€ 0 .05*

Philips

BAP70-03

Silicon PIN Diode VR continuous reverse voltage: 50 V IF continuous forward current: 100 mA Ptot total power dissipation Ts = 90 °C: 500 mW Tstg storage temperature: -65 +150 °C Tj junction temperature: -65 +150 °C High voltage, current controlled RF resistor for attenuators Low diode capacitance Very low series inductance. Datenblatt: BAP70.pdf

€ 0 .05*

Temic Semiconductor

BAQ133-GS08

Beschreibung: Small Signal Switching Diodes, Low Leakage Current Datenblatt: BAQ133.pdf

€ 0 .05*

Infineon

BAR90-02ELS E6327

PIN Diodes Diode Configuration: Single Resistance @ If: 0.8ohm Reverse Voltage: 80V Diode Capacitance: 0.25pF Forward Current: 100mA Operating Temperature Max: 125C Forward Voltage: 1V Power Dissipation: 150mW Datenblatt: BAR90.pdf

€ 0 .06*

Infineon

BB535

Beschreibung: RF Varactor Diode Datenblatt: BB535.pdf

€ 0 .04*

Infineon

BB545-E7904

Silicon Variable Capcitance Diode Capacitance at Vr, F: 2.2pF at 28V, 1MHz Capacitance Ratio: 11 Capacitance Ratio Condition: C1/C28 Voltage - Peak Reverse (Max): 30V Diode Type: Single Operating Temperature TJ: -55C to 150C Datenblatt: BB545.pdf

€ 0 .05*

Siemens

BB555

Beschreibung: Silicon Tuning Diode Datenblatt: BB555.pdf

€ 0 .04*

Siemens

BB619

Beschreibung: Silicon Variable Capacitance Diode Datenblatt: BB619.pdf

€ 0 .10*

Infineon

BB659C

Beschreibung: Silicon Variable Capacitance Diode Datenblatt: BB659C.pdf

€ 0 .05*

Siemens

BB689

Beschreibung: Silicon Tuning Diode Datenblatt: BB689.pdf

€ 0 .10*

Vishay

BB814-1-GS08

Beschreibung: Dual Varicap Diode Datenblatt: BB814.pdf

€ 0 .05*

Philips

BBY31

Beschreibung: UHF Variable Capacitance Diode Datenblatt: BBY31.pdf

€ 0 .05*

IXYS

BPS15-0045B

Beschreibung: Power Schotty-Diode 45V / 15A IFAV = 15A VRRM= 45V VF = 0.42 V Symbol Conditions Maximum Ratings IFAV TC = 135A; rectangular, d = 0.5 15 A IFSM TVJ = 45A; tp = 10 ms (50 Hz), sine 320 A (dv/dt)cr 1000 V/Î¼s TVJ -55...+150 °C TVJM 175 C Tstg -55...+125 °C Ptot TC = 25°C 90 W

€ 4 .00*

Vishay

BY228GP-E3/54

Rectifiers 2.5 Amp 150Volt Vr - Reverse Voltage: 1.5 kV If - Forward Current: 2.5 A Type: Fast Recovery Rectifiers Configuration: Single Vf - Forward Voltage: 1.6 V Max Surge Current: 50 A Ir - Reverse Current: 2 uA Recovery Time: 20 us Minimum Operating Temperature: - 65 C Maximum Operating Temperature: + 140 C

€ 0 .98*

Diotec Semiconductor

BY550-1000

Silicon Rectifier Diodes 1000V / 5A Max. off-state voltage: 1kV Forward voltage at If: 1V Load current: 5A Max. load current: 44A Case: Ø5,4x7,5mm Reverse recovery time: 1.5µs Max. forward impulse current: 220A Datenblatt: BY550.pdf

€ 0 .10*

Vishay

BYG10J-E3/TR3

Beschreibung: Standard Avalanche SMD Rectifier 600V / 1,5A Datenblatt: BYG10J.pdf

€ 0 .05*

Infineon

BYP101

Beschreibung: FRED Diode 1000V / 25A Datenblatt: BYP101.pdf

€ 4 .00*

Philips

BYR29F-600

Beschreibung: Rectifier diodes ultrafast Datenblatt: BYR29F.pdf

€ 0 .80*

Philips

BYT79-500

Rectifier diodes ultrafast 500V / 14A Datenblatt: BYT79.pdf

€ 0 .60*

Telefunken

BYT86-600

Ultra Fast Recovery Silicon Power Diode 600V / 8A Datenblatt: BYT86.pdf

€ 3 .00*

ST-Microelectronics

BYW29-100

Ultrafast Rectifier 100V / 8A Datenblatt: BYW29.pdf

€ 0 .40*

ST-Microelectronics

BYW29F-100

Ultrafast Rectifier 100V / 8A Datenblatt: BYW29.pdf

€ 0 .30*

Thomson CSF

BYW77-200

High Efficiency Fast Recovery Rectifier Diodes 200V / 25A - Vf < 0,85V at 20A - Vrrm = 50V - 200V - If(AV) = 25A at Tc=115 C - trr < 50ns - Prsm = 1,2kW Datenblatt: BYW77.pdf

€ 5 .00*

Philips

BYW95A

Fast soft-recovery controlled avalanche rectifiers Glass passivated Low leakage current Excellent stability High maximum operating temperature repetitive peak reverse voltage VRRM = 200V continuous reverse voltage VR=200V average forward current IF(AV)= 3.00A repetitive peak forward current IFRM=30A non-repetitive peak forward current IFSM=70A storage temperature Tstg: -65 to +175 Datenblatt: BYW95.pdf

€ 0 .20*

ST-Microelectronics

BYX63-600

Description: Fast Recovery Rectifier Diodes 600V / 20A Datenblatt: BYX63-600.pdf

€ 10 .00*

Siemens

BZD10C13

Power Silicon Z-Diode Zener VoltageUz: 13V Zener current Iz: 64mA Dynamic Impedanze: Zz:

€ 0 .33*

Central Semiconductor

CMDSH-3

Description: Silicon Schottky Diode 30V / 100mA Datenblatt: CMDSH3.pdf

€ 0 .10*