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BAP70-03

Produktinformationen "BAP70-03"

Silicon PIN Diode

VR continuous reverse voltage: 50 V
IF continuous forward current: 100 mA
Ptot total power dissipation Ts = 90 °C: 500 mW
Tstg storage temperature: -65 +150 °C
Tj junction temperature: -65 +150 °C
High voltage, current controlled RF resistor for attenuators
Low diode capacitance
Very low series inductance.

Datenblatt: BAP70.pdf