2SK1530-Y(F)
Produktnummer:
10571
Hersteller:
Toshiba
Lagerbestand:
0
VPE:
100
Date Code:
2009+
Verpackung:
Tray
Bauform:
2-21F1B
RoHs Status:
jes
| Anzahl | Stückpreis |
|---|---|
| Bis 100 |
8,00 €*
|
| Bis 250 |
7,50 €*
8,00 €*
(6.25% gespart)
|
| Ab 251 |
7,00 €*
8,00 €*
(12.5% gespart)
|
Nicht mehr verfügbar
Mindestbestellwert: 50,00 EUR
Produktinformationen "2SK1530-Y(F)"
Silicon N Channel MOSFET For High-Power Amplifier Application
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 12 A
Vgs - Gate-Source Voltage: 20 V
Fall Time: 60 ns
Rise Time: 25 ns
Pd - Power Dissipation: 150 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: 2SK1530.pdf
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 12 A
Vgs - Gate-Source Voltage: 20 V
Fall Time: 60 ns
Rise Time: 25 ns
Pd - Power Dissipation: 150 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Datenblatt: 2SK1530.pdf