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2SC5297

Produktinformationen "2SC5297"

NPN Triple Diffused Planar Silicon Transistor

- Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
- High speed : tf=100ns typ.
- High breakdown voltage : VCBO=1500V
- High reliability (Adoption of HVP process)
- Collector-to-Emitter Voltage VCEO = 800 V
- Emitter-to-Base Voltage VEBO = 6 V
- Collector Current Ic = 8 A
- Collector Dissipation Pc = 60W

Datenblatt: 2SC5297.pdf