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2N4393

Produktinformationen "2N4393"

N-Channel Silicon JFET 40V / 50mA / 1.8W

Gate-Drain Voltage: VGD 40 V
Gate-Source Voltage: VGS 40 V
Gate Current IG: 50 mA
Power Dissipation (TC=25°C) PD: 1.8 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +175 °C

Datenblatt: 2N4393.pdf