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2N3669

Produktinformationen "2N3669"

Silicon Controlled Rectifier, 200 Volt, 8A, TO-3

Rated Repetitive Off-State Voltage VDRM: 200 V
Off-State Leakage Current @ VDRM IDRM: 2 mA
Vf - Forward Voltage: 1.8 V
Gate Trigger Voltage - Vgt: 2 V
Gate Trigger Current - Igt: 40 mA
Holding Current Ih Max: 50 mA
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 125 C
Mounting Style: Through Hole
Package/Case: TO-3 50MIL

Datenblatt: 2N3669.pdf