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2N2219

Produktinformationen "2N2219"

NPN-Switching Silicon Transistor

Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 30 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.6 V
Pd - Power Dissipation: 800 mW
Gain Bandwidth Product fT: 250 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C

Datenblatt: 2N2219A.pdf